Semiconductor device and related manufacturing method
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorDeyuan Xiao
Life of this patent
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Abstract
A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.
Claims12
A method for manufacturing a semiconductor device, the method comprising:
- preparing a substrate structure that includes a semiconductor substrate and an insulating layer;
- forming a sacrificial layer on the insulating layer;
- using the sacrificial layer to form a wire;
- forming a dielectric member that surrounds the wire;
- forming a gate electrode that surrounds the dielectric member;
- removing the wire for forming a hollow channel that is surrounded by the gate electrode;
- forming a first insulating member and a second insulating member;
- forming a source electrode such that the first insulating member is positioned between the gate electrode and the source electrode;
- and
- forming a drain electrode such that the second insulating member is positioned between the gate electrode and the drain electrode.
Dependencies are inferred from the claim text.