Method of manufacture for an ultraviolet laser diode

A laser diode device operable at a wavelength of less than 380 nm and greater than 200 nm, the device comprising:

• a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type aluminum, gallium, and nitrogen containing material;
• an active region overlying the n-type aluminum, gallium, and nitrogen containing material, a p-type aluminum, gallium, and nitrogen containing material;
• and a first transparent conductive oxide region with an band gap energy of greater than 3.2 eV overlying the p-type aluminum, gallium, and nitrogen containing material, and an interface region overlying the conductive oxide material, the gallium and nitrogen containing substrate member being configured by subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member;
• and
• a ridge structure, and a second transparent conductive oxide material with an band gap energy of greater than 3.2 eV overlying an exposed portion of the n-type aluminum, gallium, and nitrogen containing material or overlying an exposed portion of a gallium, and nitrogen containing material overlying the n-type aluminum, gallium, and nitrogen containing material such that active region is configured between the first transparent conductive oxide material and the second conductive oxide material to provide an optical guiding effect within the active region.

A laser diode device operable at a wavelength of less than 380 nm and greater than 200 nm, the device comprising:

• a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type aluminum, gallium, and nitrogen containing material;
• an active region overlying the n-type aluminum, gallium, and nitrogen containing material, a p-type aluminum, gallium, and nitrogen containing material;
• and a first transparent conductive oxide layer with an band gap energy of greater than 3.2 eV overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide layer, the gallium and nitrogen containing substrate member configured by subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member;
• a second transparent conductive oxide layer with a band gap energy of greater than 3.2 eV overlying the n-type aluminum, gallium, and nitrogen containing material or overlying an exposed portion of an n-type gallium and nitrogen containing material overlying the n-type aluminum, gallium, and nitrogen containing material such that an active region is configured between the first transparent conductive oxide layer and the second transparent conductive oxide layer to provide an optical guiding influence whereupon the second transparent conductive oxide layer is configured as a blanket overlying an underlying surface region;
• a ridge structure configured within at least the second transparent conductive oxide layer to provide a transparent conductive oxide ridge structure;
• a contact region that exposes a portion of the second transparent oxide layer;
• and
• a metal contact material on the exposed portion of the second transparent conductive oxide layer.