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US 9,711,839 B2Granted
Frequency selective limiter
AssigneeRaytheon Company
InventorsMatthew A. Morton, Gerhard Sollner
Life of this patent
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Abstract
The present disclosure is directed towards a frequency selective limiter having a first magnetic material disposed over a first dielectric material and a strip conductor disposed over the magnetic material. In some embodiments, the frequency selective limiter includes a second magnetic material disposed over the strip conductor and a second dielectric material disposed over the second magnetic material. The first and second dielectric material may have a lower relative permittivity than the first and second magnetic material. In an embodiment, the frequency selective limiter includes a slow wave structure disposed to magnetically couple a magnetic field, produced by electromagnetic energy propagating through the slow wave structure, into the magnetic material.
Claims13
A frequency selective limiter comprising:
- a first layer of a dielectric material having first and second opposing surfaces;
- a first layer of magnetic material having first and second opposing surfaces, wherein the second surface of the first layer of the dielectric material is disposed on the first surface of the first magnetic material, and wherein the dielectric material has a lower relative permittivity than the magnetic material;
- a second layer of a dielectric material having first and second opposing surfaces;
- a second layer of magnetic material having first and second opposing surfaces, wherein the first surface of the second layer of the dielectric material is disposed on the second surface of the second magnetic material;
- a strip conductor disposed between the first and second layer of magnetic material;
- first and second ground planes, wherein the first ground plane is disposed on the first surface of the first layer of dielectric material and the second ground plane is disposed on the second surface of the second layer of dielectric material;
- a first set of conducting pads disposed between the first layer of the dielectric material and the first layer of magnetic material and a second set of conducting pads disposed between the second layer of the dielectric material and the second layer of magnetic material;
- and
- a first set of vias disposed within the first layer of the dielectric material and a second set of vias disposed within the second layer of the dielectric material;
- wherein the combination of the first and second layers of dielectric material and the first and second layers of magnetic material comprise a slow wave structure having an input impedance Z0 and wherein the impedances periodically change from an impedance greater than Z0 to an impedance less than Z0 as an electromagnetic energy propagates through the slow wave structure.
7 more elements
A frequency selective limiter comprising:
- a magnetic material to magnetically couple a magnetic field, produced by electromagnetic energy propagating through a slow wave structure, into the magnetic material;
- a dielectric layer disposed on the magnetic material, wherein the dielectric layer has a lower relative permittivity than the magnetic material;
- a ground plane disposed on a first surface of the dielectric layer;
- a set of conducting pads disposed between the dielectric layer and the magnetic material;
- a set of vias disposed within the dielectric layer, wherein the set of vias couple the ground plane to the set of conducting pads to form alternating sections of low impedance microstrip sections and high impedance microstrip sections within the slow wave structure:
- and
- the slow wave structure having an input impedance Z0 and wherein the alternating sections of the low and high impedance sections periodically change from an impedance greater than Z0 to an impedance less than Z0 as the electromagnetic energy propagates through the slow wave structure.
4 more elements
A frequency selective limiter comprising:
- a first layer of a dielectric material and a second layer of a dielectric material, each having first and second opposing surfaces;
- a first layer of a magnetic material and a second layer of a magnetic material;
- each having first and second opposing surfaces, wherein the second surface of the first layer of the dielectric material is disposed on the first surface of the first magnetic material and the first surface of the second layer of the dielectric material is disposed on the second surface of the second magnetic material, wherein the dielectric material has a lower relative permittivity than the magnetic material;
- a strip conductor disposed between the first and second layer of magnetic material;
- and
- a slow wave structure comprising a transmission line having an input impedance Z0 and wherein the transmission line includes a first transmission line section and a pair of second transmission line sections, wherein the first transmission line section has an impedance ZH higher than Z0 and the pair of second transmission line sections have an impedance lower than Z0;
- wherein the first transmission line section includes portions of the strip conductor and portions of the first or the second layer of magnetic material and the pair of second transmission line sections includes portions of the strip conductor, portions of the first or the second layer of magnetic material and portions of the first or the second layers of dielectric material.
4 more elements
Dependencies are inferred from the claim text.