US 9,711,416 B2 · Fin field effect transistor including a strained epitaxial semiconductor shell

Abstract

A semiconductor fin including a single crystalline semiconductor material is formed on a dielectric layer. A semiconductor shell including an epitaxial semiconductor material is formed on all physically exposed surfaces of the semiconductor fin by selective epitaxy, which deposits the semiconductor material only on semiconductor surfaces and not on dielectric surfaces. The epitaxial semiconductor material can be different from the single crystalline semiconductor material, and the semiconductor shell can be bilaterally strained due to lattice mismatch. A fin field effect transistor including a strained channel can be formed. Further, the semiconductor shell can advantageously alter properties of the source and drain regions, for example, by allowing incorporation of more dopants or by facilitating a metallization process.

Claims19

Dependent claims

A semiconductor structure comprising:

an insulator layer located on a substrate;
a semiconductor fin comprising a first semiconductor material, laterally bounded by a pair of parallel lengthwise sidewalls and a pair of parallel widthwise sidewalls, and located on said insulator layer;
and
an epitaxial semiconductor shell comprising a second semiconductor material that is epitaxially aligned to said first semiconductor material, and contiguously contacting all of said pair of parallel lengthwise sidewalls and all of said pair of parallel widthwise sidewalls, wherein a bottommost surface of said epitaxial semiconductor shell is coplanar with a bottommost surface of said semiconductor fin.

1 more element

Dependencies are inferred from the claim text.

Fin field effect transistor including a strained epitaxial semiconductor shell

Life of this patent

Fin field effect transistor including a strained epitaxial semiconductor shell

Life of this patent

Abstract

Claims19