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AssigneeToyota Jidosha Kabushiki Kaisha
InventorsHironori Daikoku, Hidemitsu Sakamoto, Motohisa Kado, Kazuhiko Kusunoki
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The purpose of the present invention is to produce a high-quality SiC single crystal with good reproducibility while avoiding the fluctuations in the solution-contacting position of a seed crystal among production operations. A method for producing a SiC single crystal by bringing a SiC seed crystal supported by a supporting bar into contact with a solution that has been heated by high-frequency induction to thereby grow the SiC single crystal, wherein the supporting bar is born down while applying a magnetic field to the solution to thereby bring the SiC seed crystal into contact with the solution, and subsequently the application of the magnetic field is halted to grow the SiC single crystal.
A method of production of a SiC single crystal which brings a SiC seed crystal which is supported by a support rod into contact with a solution that has been heated by induction to grow a SiC single crystal, said method of production of a SiC single crystal making said support rod descend to make the SiC seed crystal contact said solution in the presence of a magnetic field which is applied to said solution, then stopping application of said magnetic field while growing the SiC single crystal.
Dependencies are inferred from the claim text.