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US 9,705,080 B2Granted
Forming self-aligned conductive lines for resistive random access memories
AssigneeMircon Technology, Inc.
InventorsInnocenzo Tortorelli, Fabio Pellizzer, Pietro Petruzza
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Abstract
Resistive random access memory elements, such as phase change memory elements, may be defined using a plurality of parallel conductive lines over a stack of layers, at least one of which includes a resistive switching material. The stack may be etched using the conductive lines as a mask. As a result, memory elements may be self-aligned to the conductive lines.
Claims20
A method comprising:
- forming a stack, wherein the stack includes a plurality of conductive lines separated by a dielectric material, each conductive line of the plurality of conductive lines comprising:
- a metal;
- and a barrier layer surrounding the metal on three sides;
- using said metal as a hard mask, removing at least a portion of said stack to form a plurality of memory cells separated by a plurality of trenches.
1 more element
A method comprising:
- forming a stack, the stack comprising:
- a plurality of bottom electrodes;
- a heater layer;
- a chalcogenide layer;
- and
- a cap layer;
- forming a dielectric layer over the cap layer;
- forming a plurality of barrier layers and conductive lines in the dielectric layer, the barrier layer surrounding the metal on three sides;
- and
- using the metal as a mask, etching the stack to form a plurality of spaced trenches defining a plurality of memory cells.
7 more elements
An method comprising:
- forming a stack, the stack comprising:
- a plurality of bottom electrodes separated by a dielectric material;
- a layer of resistive switching material;
- and
- an upper electrode layer;
- forming a plurality of conductive lines over the upper electrode layer and aligned with the plurality of bottom electrodes;
- and
- using the plurality of conductive lines as a hard mask, etching a plurality of trenches in the stack, wherein the plurality of trenches extend through the stack to the dielectric material to form a plurality of memory elements.
5 more elements
Dependencies are inferred from the claim text.