High-sensitivity multilayer resist film and method of increasing photosensitivity of resist film
AssigneeNational Institute for Materials Science
InventorsJin Kawakita, Toyohiro Chikyo, Takayuki Nakane
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Abstract
A resist film structure is provided, which allows a resist layer to have improved photosensitivity to EUV or electron beams without changing the photosensitivity of the resist material itself. A metal layer 1 with a thickness as small as a nanometer level is provided on a resist polymer layer 2 formed on a substrate 3. When the resist layer in this structure is exposed to light, the metal layer 1 produces a surface plasmon effect to enhance the irradiation to the resist film, so that the photosensitivity of the resist film is improved.
Claims5
A method of improving sensitivity of a resist film, the method comprising the steps of:
- preparing a laminated resist film by covering an entire surface of an EUV light-sensitive resist polymer film with a metal layer having a thickness of at most 15 nm;
- and
- irradiating an EUV light according to a desired pattern over the metal layer of the laminated resist film to form the desired pattern in the resist polymer film under an irradiated portion of the metal layer,
- wherein the thickness of the metal layer is such that the EUV light at least partially passes therethrough, and
- the metal layer has a gap or an opening that passes through the metal layer from one side to the other.
Dependencies are inferred from the claim text.