Apparatus for measuring overlay errors
AssigneeKLA-Tencor Corporation
InventorsMark Ghinovker, Michael Adel, Walter D. Mieher, Ady Levy, Dan Wack
Life of this patent
Estimating the term…
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AssigneeKLA-Tencor Corporation
InventorsMark Ghinovker, Michael Adel, Walter D. Mieher, Ady Levy, Dan Wack
Estimating the term…
A metrology system for determining overlay is disclosed. The system includes an optical assembly for capturing images of an overlay mark and a computer for analyzing the captured images to determine whether there is an overlay error. The mark comprises first and second regions that each include at least two separately generated working zones, juxtaposed relative to one another, configured to provide overlay information in a first direction, and include a periodic structure having coarsely segmented elements. The mark comprises third and fourth regions that each include at least two separately generated working zones, juxtaposed relative to one another, configured to provide overlay information in a second direction, and include a periodic structure having coarsely segmented elements. Working zones of the first and second regions are diagonally opposed and spatially offset relative to one another, and the working zones of the third and fourth regions are diagonally opposed and spatially offset relative to one another.
A metrology system for determining the overlay between at least two separately generated patterns on a single or successive layers of a substrate, the system comprising:
A metrology system for determining the overlay between at least two separately generated patterns on a single or successive layers of a substrate, the system comprising:
A metrology system for determining the overlay between at least two separately generated patterns on a single or successive layers of a substrate, the system comprising:
A metrology system for determining the overlay between at least two separately generated patterns on a single or successive layers of a substrate, the system comprising:
A metrology system for determining the overlay between at least two separately generated patterns on a single or successive layers of a substrate, the system comprising:
A metrology system for determining the overlay between at least two separately generated patterns on a single or successive layers of a substrate, the system comprising:
The system as recited in claim rein the working zones are configured to diminish an impact of non-uniformities across the overlay mark on tool and wafer induced shifts.
A metrology system for determining the overlay between at least two separately generated patterns on a single or successive layers of a substrate, the system comprising:
A metrology system for determining the overlay between at least two separately generated patterns on a single or successive layers of a substrate, the system comprising:
Dependencies are inferred from the claim text.