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US 9,696,629 B2Granted
Photoresist pattern trimming compositions and methods
AssigneeRohm and Haas Electronic Materials LLC
InventorsIrvinder Kaur, Cong Liu, Kevin Rowell
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Abstract
Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.
Claims21
A photoresist pattern trimming composition, comprising:
- a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group.
Dependencies are inferred from the claim text.