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US 9,684,234 B2Granted
Sequential infiltration synthesis for enhancing multiple-patterning lithography
AssigneeUchicago Argonne, LLC
InventorsSeth B. Darling, Jeffrey W. Elam, Yu-Chih Tseng
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Abstract
Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.
Claims14
A method of preparing inorganic features for forming multiple-patterned nanostructures, comprising:
- applying a first resist layer to a substrate stack having a substrate and a first hard mask disposed thereon;
- patterning the first resist layer with a first pattern;
- modifying the patterned first resist layer with a first iteration of inorganic features infiltrated within the patterned first resist layer using Sequential Infiltration Synthesis (SIS) treatment;
- applying a second resist layer to the substrate stack;
- patterning the second resist layer with a second pattern;
- modifying the patterned second resist layer with a second iteration of inorganic features infiltrated within the pattered second resist layer using Sequential Infiltration Synthesis (SIS) treatment;
- and
- engraving a multiple-density pattern reflecting the first pattern and the second pattern onto the substrate.
5 more elements
A method of lithography comprising:
- applying a first resist layer on a substrate stack,
- patterning the first resist layer to form a first pattern;
- developing the patterned first resist layer;
- infiltrating the developed first resist layer using Sequential Infiltration Synthesis wherein:
- a first precursor is exposed to and infiltrates into the developed first resist layer and reactions with the bulk of the developed first resist layer;
- and
- a second precursor is exposed to and infiltrates into the developed first resist layer and reactions with the first precursor to form an inorganic component within the developed first resist layer;
- etching the substrate stack to engrave the first pattern and the second pattern into a substrate;
- and
- removing the developed first resist layer.
7 more elements
Dependencies are inferred from the claim text.