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AssigneeGTAT Corporation
InventorsYuepeng Wan, Santhana Raghavan Parthasarathy, Carl Chartier, Adrian Servini, Chandra P. Khattak
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A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon “slim rods” commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.
A high surface area silicon filament configured for bulk deposition thereupon of polysilicon in a CVD reactor, the CVD reactor including a power supply adjusted and configured for deposition of polysilicon onto a solid, cylindrical, 7 mm diameter silicon slim rod, said slim rod having a specified slim rod length and a specified slim rod surface area, wherein:
A CVD reactor for bulk production of polysilicon, said CVD reactor being configured for depositing polysilicon onto a solid, cylindrical, 7 mm diameter silicon slim rod having a specified slim rod length and a specified slim rod surface area, the CVD reactor comprising:
Dependencies are inferred from the claim text.