Back to results
US 9,679,241 B2Granted
Thermodynamic random access memory for neuromorphic computing utilizing AHaH (anti-hebbian and hebbian) and memristor components
AssigneeKnowmTech, LLC
InventorsAlex Nugent, Timothy Molter
Life of this patent
Estimating the term…
Abstract
A thermodynamic random access memory includes one or more AHaH (Anti-Hebbian and Hebbian) node wherein read out of data is accomplished via a common summing electrode through memristive components and wherein multiple input cells are simultaneously active. A ktRAM architecture comprising a memory wherein each input synapse or “bit” of the memory interacts on or with a common electrode through a common “dendritic” electrode, and wherein each input can be individually driven. Each input constitutes a memory cell driving a common electrode.
Claims20
An apparatus, comprising:
- a ktRAM comprising at least one AHaH (Anti-Hebbian and Hebbian) node wherein read out of data is accomplished via a common summing electrode through memristive components and wherein multiple input cells are simultaneously active.
An apparatus, comprising:
- a ktRAM comprising at least one AHaH (Anti-Hebbian and Hebbian) node wherein read out of data is accomplished via a common summing electrode through memristive components and wherein multiple input cells are simultaneously active;
- and
- an AHAH controller that communicates with and controls said at least one AHaH node.
An apparatus, comprising:
- a ktRAM comprising at least one AHaH (Anti-Hebbian and Hebbian) node wherein read out of data is accomplished via a common summing electrode through memristive components and wherein multiple input cells are simultaneously active, and wherein said ktRAM comprises an integrated circuit chip.
Dependencies are inferred from the claim text.