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US 9,670,405 B2Granted
Production method of phosphor
AssigneeNational Institute for Materials Science
InventorNaoto Hirosaki
Life of this patent
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Abstract
A production method of a phosphor includes firing a starting material mixture in a nitrogen atmosphere at a temperature range between 1,500° C. inclusive and 2,200° C. inclusive. The starting material mixture is a mixture of metallic compounds, and is capable of constituting a composition including M, A, Al, O, and N (M is Eu; and A is one kind or two or more kinds of element(s) selected from C, Si, Ge, Sn, B, Ga, In, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, Lu, Ti, Zr, Hf, Ta, and W) by firing.
Claims17
A production method of a phosphor, comprising:
- firing a starting material mixture in a nitrogen atmosphere at a temperature range between 1,500° C. inclusive and 2,200° C. inclusive,
- wherein the starting material mixture is a mixture of metallic compounds, and is capable of constituting a composition comprising M, A, Al, O, and N (M is Eu;
- and A is at least an element selected from the group consisting of C, Si, Ge, Sn, B, Ga, In, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, Lu, Ti, Zr, Hf, Ta, and W) by firing,
- the phosphor comprises an AlN-based crystal including
- an element A including Si;
- Eu as a metallic element M wherein Eu is divalent;
- and
- oxygen,
- the AlN-based crystal has a wurtzite-type AlN crystal structure or a crystal structure selected from the group consisting of 2Hδ, 27R, 21R, 12H, 15R, and 8H,
- said elements A and M, and the oxygen are dissolved in the AlN-based crystal in a solid state, and
- the phosphor emits fluorescence having a peak at a wavelength within a range between 450 nm inclusive and 520 nm inclusive by irradiation of an excitation source.
8 more elements
Dependencies are inferred from the claim text.