Loading patent…
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsMasahiko Ishida, Hiroshi Saito, Atsushi Yoshida
Estimating the term…
The present invention provides a technique which allows stable use of an ion-exchange resin for removing boron impurities over a long period of time in the purification step of a silane compound or a chlorosilane compound. In the present invention, a weakly basic ion-exchange resin used for the purification of a silane compound and a chlorosilane compound is cleaned with a gas containing hydrogen chloride. When this cleaning treatment is used for the initial activation of the weakly basic ion-exchange resin, a higher impurity-adsorbing capacity can be obtained. Further, use of the cleaning treatment for the regeneration of the weakly basic ion-exchange resin allows stable use of the ion-exchange resin for a long time. This allows reduction in the amount of the resin used in a long-term operation and reduction in the cost of used resin disposal.
A method for purifying a silane compound or a chlorosilane compound, wherein a weakly basic ion-exchange resin cleaned with a gas comprising hydrogen chloride is used to adsorb and remove a boron impurity contained in the silane compound or the chlorosilane compound, by contacting the silane compound or chlorosilane compound with the weakly basic ion-exchange resin.
A method for regenerating a weakly basic ion-exchange resin which has been used to absorb and remove a boron impurity from a silane or chlorosilane, comprising:
Dependencies are inferred from the claim text.