US 9,666,432 B2 · Method and apparatus for forming device quality gallium nitride layers on silicon substrates

Abstract

Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN.

Claims27

Dependent claims

A method for forming a GaN device layer onto a silicon substrate coating surface comprising:

supporting the silicon (Si) substrate inside an atomic layer deposition (ALD) chamber;
applying an aluminum nitride (AIN) nucleation layer onto the silicon substrate coating surface using a first ALD method;
applying a transition layer over the AIN transition layer using a second ALD method;
applying a GaN device layer over the transition layer using a third ALD method;
wherein an ALD reaction temperature for each of the first, the second and the third ALD methods is between 80 and 800° C.

2 more elements

Dependencies are inferred from the claim text.

Method and apparatus for forming device quality gallium nitride layers on silicon substrates

Life of this patent

Method and apparatus for forming device quality gallium nitride layers on silicon substrates

Life of this patent

Abstract

Claims27