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US 9,665,001 B2Granted
Photoresists and methods for use thereof
AssigneeRohm and Haas Electronic Materials LLC
InventorGerhard Pohlers
Life of this patent
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Abstract
New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.
Claims6
A method for forming a photoresist relief image comprising:
- (a) applying on a substrate a chemically-amplified photoresist comprising a resin, a photoactive component and an adhesion-promoting agent;
- and
- (b) exposing the photoresist coating layer to patterned 193 nm radiation;
- wherein the resin is substantially or completely free of phenyl or other aromatic groups, and the adhesion-promoting component is selected from the group consisting of:
- 3-glycidoxypropyl (methyl)diethoxysilane,
- 3-glycidoxypropyl (dimethyl)ethoxysilane,
- n-butyl trimethoxysilane,
- n-octyl trimethoxysilane,
- 3-(pentafluorophenyl)propyl trimethoxysilane,
- 1,8-bis(triethoxysilyl)octane,
- butanediol diglycidyl ether, and
- Ethylhexyl glycidyl ether.
9 more elements
A method for forming a photoresist relief image comprising:
- (a) applying on a substrate a chemically-amplified photoresist comprising a resin, a photoactive component and an adhesion-promoting component;
- and
- (b) exposing the photoresist coating layer to patterned activating radiation;
- wherein the resin is substantially or completely free of phenyl or other aromatic groups, and
- the adhesion-promoting component is selected from the group consisting of:
- 3-glycidoxypropyl (methyl)diethoxysilane,
- 3-glycidoxypropyl (dimethyl)ethoxysilane,
- 3-glycidoxypropyl trimethoxysilane, and
- 3-glycidoxypropyl triethoxysilane.
6 more elements
Dependencies are inferred from the claim text.