Semiconductor film with adhesion layer and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Ming Liao, Chun-Heng Chen, Sheng-Po Wu, Ming-Feng Hsieh, Hongfa Luan
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Abstract
Presented herein is a device including an insulator layer disposed over a substrate. An adhesion layer is disposed over the insulator layer and includes a semiconductor oxide, the semiconductor oxide including a compound of a semiconductor element and oxygen. A semiconductor film layer is over the adhesion layer, the semiconductor film layer being a material including the semiconductor element, the semiconductor film layer having a different composition than the adhesion layer. Bonds at an interface between the insulator layer and the adhesion layer comprise oxygen-hydrogen bonds and oxygen-semiconductor element bonds.
Claims20
A device, comprising:
- an insulator layer;
- an adhesion layer over the insulator layer and comprising a semiconductor oxide, the semiconductor oxide comprising a compound of a semiconductor element and oxygen;
- and
- a semiconductor film layer over the adhesion layer, the semiconductor film layer being a material comprising the semiconductor element, the semiconductor film layer having a different composition than the adhesion layer, wherein the adhesion layer comprises a first adhesion layer over the insulating layer and a second adhesion layer over the first adhesion layer, the first adhesion layer comprising oxygen at a substantially constant concentration throughout, and the second adhesion layer comprising oxygen, wherein a concentration of oxygen in the second adhesion layer is greatest nearest the first adhesion layer;
- wherein bonds at an interface between the insulator layer and the adhesion layer:
- comprise oxygen-hydrogen bonds and oxygen-semiconductor element bonds;
- and
- are substantially free of nitrogen.
A device, comprising:
- a first adhesion layer disposed over an oxide layer, the first adhesion layer comprising a semiconductor oxide, the semiconductor oxide comprising a compound of a semiconductor element and oxygen;
- a second adhesion layer disposed over the first adhesion layer, the second adhesion layer comprising the semiconductor oxide, wherein a concentration of oxygen in the second adhesion layer forms a gradient with the concentration of oxygen being lowest at a top surface of the second adhesion layer and greatest at a bottom surface of the second adhesion layer, and the second adhesion layer is substantially nitrogen free;
- a semiconductor layer over the second adhesion layer and comprising a material comprising the semiconductor element, the semiconductor layer having a different composition than the first adhesion layer and the second adhesion layer;
- and
- an active device formed in the semiconductor layer.
A device, comprising:
- a buried oxide layer;
- a first bonding layer overlying the buried oxide layer, wherein bonds at an interface between the buried oxide layer and the first bonding layer include oxygen as a bonding element, and the first bonding layer is substantially free of nitrogen;
- a second bonding layer overlying the first bonding layer, wherein a concentration of oxygen in the second bonding layer forms a gradient with oxygen concentration being lowest at a top surface of the second bonding layer and greatest at a bottom surface of the second bonding layer;
- a silicon-comprising layer overlying the second bonding layer;
- and
- a transistor, comprising:
- a source region and a drain region disposed in the silicon-comprising layer;
- and
- a gate overlying the silicon-comprising layer.
Dependencies are inferred from the claim text.