CMOS-MEMS device structure, bonding mesa structure and associated method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Wen Cheng, Yi-Chuan Teng
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Abstract
The present disclosure provides a CMOS-MEMS device structure. The CMOS-MEMS device structure includes a sensing substrate and a CMOS substrate. The sensing substrate includes a bonding mesa structure. The CMOS substrate includes a top dielectric layer. The sensing substrate and the CMOS substrate are bonded through the bonding mesa structure, and the bonding mesa structure defines a bonding gap between the CMOS substrate and the sensing substrate.
Claims17
A CMOS-MEMS device structure, comprising:
- a sensing substrate, comprising a bonding mesa structure, wherein the bonding mesa structure includes a first step bonding mesa and a second step bonding mesa, the second step bonding mesa being wider than the first step bonding mesa;
- and
- a CMOS substrate, comprising a top dielectric layer;
- wherein the sensing substrate and the CMOS substrate are bonded through the bonding mesa structure, and the bonding mesa structure defines a bonding gap between the CMOS substrate and the sensing substrate, and the second step bonding mesa is in contact with the top dielectric layer.
A bonding mesa structure for bonding a first semiconductor structure and a second semiconductor structure, comprising:
- a two step bonding mesa disposed on the first semiconductor structure, wherein a bonding metal is connected to the two step bonding mesa, wherein the two step bonding mesa includes a first step bonding mesa and a second step bonding mesa, the second step bonding mesa being in contact with the first semiconductor structure, the first step bonding mesa being in contact with the second step bonding mesa;
- and
- an opening disposed in a surface of the second semiconductor structure, wherein a metal layer in the second semiconductor structure is exposed through the opening;
- wherein the first step bonding mesa is inserted into the opening to bring the bonding metal in contact with the metal layer, and the second step bonding mesa is in contact with the surface of the second semiconductor structure.
A method of fabricating a CMOS-MEMS device structure, comprising:
- providing a first semiconductor substrate;
- depositing a bonding metal layer on the first semiconductor substrate;
- etching a portion of the bonding metal layer to form a bonding metal;
- etching the first semiconductor substrate to form a two step bonding mesa, including:
- etching the first semiconductor substrate to form a first step bonding mesa;
- and
- etching the first semiconductor substrate to form a second step bonding mesa;
- etching the first semiconductor substrate to form a sensing substrate;
- providing a second semiconductor substrate including an opening on a surface of the second semiconductor substrate, wherein a metal layer in the second semiconductor substrate is exposed through the opening;
- and
- bonding the first semiconductor substrate to the second semiconductor substrate through the two step bonding mesa, and contacting the second step bonding mesa with the surface of the second semiconductor substrate;
- wherein the two step bonding mesa defines a bonding gap between the first semiconductor substrate and the second semiconductor substrate, and the second step bonding mesa is wider than the first step bonding mesa and the opening.
Dependencies are inferred from the claim text.