Electrostatic discharge protection semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsChung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Abstract
An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, and at least a first doped region formed in the drain region. The source region and the drain region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The first doped region is electrically connected to a ground potential.
Claims14
An electrostatic discharge (ESD) protection semiconductor device comprising:
- a substrate;
- a gate set formed on the substrate;
- a source region and a drain region formed in the substrate respectively at two sides of the gate set, and the source region and the drain region comprising a first conductivity type, wherein the drain region is electrically connected to an input/out (I/O) pad;
- at least a first doped region formed in the drain region;
- the first doped region comprising a second conductivity type complementary to the first conductivity type, and the first doped region being electrically connected to a ground potential, wherein the gate set is disposed in between the source region and the first doped region;
- and
- a first blocking structure surrounding the first doped region and isolating the first doped region from the drain region.
Dependencies are inferred from the claim text.