Flip chip type laser diode and lateral chip type laser diode

A lateral chip type laser diode, comprising:

• a removable substrate;
• a first semiconductor layer, disposed on the removable substrate;
• an emitting layer, disposed on a part of the first semiconductor layer;
• a second semiconductor layer, disposed on the emitting layer and forming a ridge mesa;
• at least one current conducting layer, disposed on a part of the first semiconductor layer, wherein the at least one current conducting layer is electrically connected with the first semiconductor layer and isolated from the second semiconductor layer;
• a patterned insulating layer, covering the first semiconductor layer, the emitting layer, the second semiconductor layer, and the at least one current conducting layer, and exposing a part of the second semiconductor layer and a part of the at least one current conducting layer;
• at least one first electrode, disposed on an area of the at least one current conducting layer that is not covered by the patterned insulating layer;
• and
• a second electrode, disposed on an area of the second semiconductor layer that is not covered by the patterned insulating layer, wherein a first surface of the at least one first electrode away from the at least one current conducting layer and a second surface of the second electrode away from the second semiconductor layer are approximately coplanar.