Photoresist with top-coating photo-decomposable base for photolithography
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorHuayong Hu
Life of this patent
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Abstract
A lithographic method includes forming a photoresist layer on a target layer, forming a photo-decomposable base (PDB) layer on the photo resist layer, performing an exposure operation using a mask, and performing a negative development treatment to form a patterned photoresist layer on the target layer. In some cases, the photo-decomposable base layer includes a self-generating top coating photo-decomposable base (TC-PDB) layer. The method can also include forming a top surface water-resistant coating in separate coating process. In some embodiments, a top surface water-resistant coating is self-generated during a photoresist coating process.
Claims15
A lithographic method, comprising:
- forming a photoresist layer on a target layer;
- forming a photo-decomposable base (PDB) layer on the photo resist layer;
- performing an exposure operation using a mask exposing a region of the PDB layer so that a top surface of an exposed region of the PDB layer has a base concentration higher than a base of the exposed region of the PDB layer;
- and
- performing a negative development process to form a patterned photoresist layer on the target layer.
A lithographic method, comprising:
- forming a composite layer on a target layer, the composite layer including a photo-decomposable base (PDB) layer over a photo resist layer;
- performing an exposure operation using a mask exposing a region of the PDB layer so that a top surface of an exposed region of the PDB layer has a base concentration higher than a base of the exposed region of the PDB layer;
- and
- performing a negative development treatment to form a patterned photoresist layer on the target layer.
Dependencies are inferred from the claim text.