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US 9,640,233 B2Granted
Semiconductor memory device having inverting circuit and controlling method there of
AssigneeSamsung Electronics Co., Ltd.
InventorKyo-min Sohn
Life of this patent
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Abstract
A semiconductor memory device includes a plurality of memory banks in a first region, a data terminal to which an input data signal is input, the data terminal being in a second region, and an inverting circuit that inverts or non-inverts the input data signal in response to an inversion control signal indicating whether the input data signal has been inverted, wherein at least one inverting circuit is disposed for each of the plurality of memory banks.
Claims19
A method of controlling a memory, the method comprising:
- receiving a control signal at a control terminal;
- receiving an input data to be written to a plurality of memory banks via data terminals;
- performing an inverting mode for inverting or non-inverting the input data, using an inverting circuit, based on the control signal according to a first mode register signal;
- and
- performing a data masking mode for masking the input data, using a data masking circuit, based on the control signal according to a second mode register signal,
- wherein the inverting circuit is disposed for each of the plurality of memory banks.
3 more elements
A method of controlling a memory, the method comprising:
- receiving a control signal at a control terminal;
- receiving an input data to be written to a plurality of memory banks via data terminals;
- performing an inverting mode for inverting or non-inverting the input data, using an inverting circuit, based on a first mode register signal and the control signal;
- and
- performing a data masking mode for masking the input data, using a data masking circuit, based on a second mode register signal and the control signal,
- wherein the control signal is received from only one control terminal.
3 more elements
Dependencies are inferred from the claim text.