Read retry operations where likelihood value assignments change sign at different read voltages for each read retry

A device comprising:

• a controller configured to perform multiple read retries of a memory by implementing the following steps:
• reading a codeword from the memory using a first read voltage to obtain a first read value;
• mapping the first read value to one or more first likelihood values based on a first likelihood value assignment that assigns a likelihood value to each of a plurality of possible decision regions of read voltages, wherein the first likelihood value assignment changes sign substantially at the first read voltage;
• reading the codeword of the memory using a second read voltage to obtain a second read value, wherein the second read voltage is shifted from the first read voltage to compensate for an expected change in one or more analog voltages of one or more memory cells of the memory;
• and
• mapping the second read value to one or more second likelihood values based on a second likelihood value assignment that assigns a likelihood value to each of the plurality of possible decision regions of read voltages, wherein the second likelihood value assignment changes sign substantially at the second read voltage.

An apparatus for multiple read retries of a memory, comprising:

• a memory;
• and
• at least one processing device, coupled to the memory, operative to implement the following steps:
• reading a codeword from the memory using a first read voltage to obtain a first read value;
• mapping the first read value to one or more first likelihood values based on a first likelihood value assignment that assigns a likelihood value to each of a plurality of possible decision regions of read voltages, wherein the first likelihood value assignment changes sign substantially at the first read voltage;
• reading the codeword of the memory using a second read voltage to obtain a second read value, wherein the second read voltage is shifted from the first read voltage to compensate for an expected change in one or more analog voltages of one or more memory cells of the memory;
• and
• mapping the second read value to one or more second likelihood values based on a second likelihood value assignment that assigns a likelihood value to each of the plurality of possible decision regions of read voltages, wherein the second likelihood value assignment changes sign substantially at the second read voltage.