US 9,627,045 B1 · Superconducting devices with ferromagnetic barrier junctions

Abstract

A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.

Claims20

Dependent claims

A Josephson junction memory cell comprising:

at least one magnetic Josephson junction having at least one ferromagnetic barrier layer formed from a ferromagnetic material;
an output port;
and
a write port configured to define a memory state of the Josephson junction memory cell having first and second memory states, the first state being associated with a generated single flux quantum (SFQ) pulse produced at the output port and the second state being associated with absence of a generated single flux quantum (SFQ) pulse at the output port.

1 more element

A superconducting memory, comprising:

an array of memory cells arranged in rows and columns;
each said memory cell comprising:
a comparator having a series of Josephson junctions, at least one of the Josephson junctions being a magnetic Josephson junction having a ferromagnetic material barrier supporting a first state and a second state of magnetization,
a write port for the magnetic Josephson junction configured to induce a change between the states of magnetization, and
an output port configured to selectively present a single flux quantum pulse corresponding to the first state and to selectively suppress a single flux quantum pulse corresponding to the second state;
a respective write line for each of the rows, coupled to the write port of each respective memory cell of the respective row;
and
a respective write line for each of the columns, coupled to the write port of each respective memory cell of the respective column,
wherein a memory cell at the intersection of a selected row write line and a selected column write line is induced to switch between respective states of magnetization.

6 more elements

Dependencies are inferred from the claim text.

Superconducting devices with ferromagnetic barrier junctions

Life of this patent

Superconducting devices with ferromagnetic barrier junctions

Life of this patent

Abstract

Claims20