Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
AssigneeD2S, Inc.
InventorsAkira Fujimura, Harold Robert Zable
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Abstract
A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.
Claims18
A method for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction comprising the step of determining a plurality of shaped beam charged particle beam shots for an exposure pass, wherein the plurality of shaped beam shots is capable of forming a pattern on a surface, wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, and wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots.
A method for manufacturing a surface using charged particle beam lithography, the method comprising the steps of:
- determining a plurality of shaped beam shots for a plurality of exposure passes;
- and
- forming a pattern on the surface with the plurality of shots,
- wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, and wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots.
Dependencies are inferred from the claim text.