Voltage supply devices generating voltages applied to nonvolatile memory cells
AssigneeSK hynix Inc.
InventorHoe Sam Jeong
Life of this patent
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Abstract
A voltage supply device includes a bias generator, a control signal generator and a cell switching circuit. The bias generator divides a first supply voltage to output a plurality of divided supply voltages. The control signal generator receives the plurality of divided supply voltages to generate a plurality of control signals. The cell switching circuit receives the plurality of control signals to provide nonvolatile memory cells with one or more of a ground voltage, the first supply voltage, or a second supply voltage different from the first supply voltage. Each of the bias generator, the control signal generator and the cell switching circuit is implemented with medium voltage MOS transistors having a breakdown voltage of from approximately 7 volts to approximately 15 volts.
Claims23
A voltage supply device comprising:
- a bias generator suitable for dividing a first supply voltage to output a plurality of divided supply voltages;
- a control signal generator suitable for receiving the plurality of divided supply voltages to generate a plurality of control signals;
- and
- a cell switching circuit suitable for receiving the plurality of control signals to provide nonvolatile memory cells with one or more of a ground voltage, the first supply voltage and a second supply voltage different from the first supply voltage,
- wherein each of the bias generator, the control signal generator and the cell switching circuit is implemented with medium voltage MOS transistors having a breakdown voltage of from approximately 7 volts to approximately 15 volts.
Dependencies are inferred from the claim text.