Fluorinated tin oxide back contact for AZTSSe photovoltaic devices
AssigneeInternational Business Machines Corporation
InventorsTalia S. Gershon, Oki Gunawan, Richard A. Haight, Yun Seog Lee
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Abstract
A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag2ZnSn(S,Se)4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.
Claims18
A photovoltaic device, comprising:
- a substrate;
- a back contact comprising a low-work function material selected from the group consisting of fluorinated tin oxide (SnO2:F or FTO), ZnO:Al, ZnO:B, In2O3:Sn, In2O3:Zn, TiB2, LaB6, and TiO2:Nb;
- a photovoltaic absorber material layer comprising an n-type AZTSSe material on a side of the back contact opposite the substrate, the n-type AZTSSe material comprising Ag, Zn, Sn, S, and Se;
- wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer;
- a Schottky contact layer comprising MoO3 on a side of the absorber layer opposite the back contact;
- and
- a top electrode on a side of the Schottky contact layer opposite the absorber layer.
A method for making a photovoltaic device, the method comprising:
- providing a substrate;
- forming a back contact comprising a low-work function material on the substrate, the low work function material selected from the group consisting of fluorinated tin oxide (SnO2:F or FTO), ZnO:Al, ZnO:B, In2O3:Sn, In2O3:Zn, TiB2, LaB6, and TiO2:Nb;
- forming a photovoltaic absorber material layer comprising an n-type AZTSSe material on a side of the back contact opposite the substrate wherein an Ohmic contact is formed between the low-work function material and the photovoltaic absorber material layer, the n-type AZTSSE material comprising Ag, Zn, Sn, S, and Se;
- forming a Schottky contact layer on a side of the absorber layer opposite the back contact, the Schottky contact layer comprising MoO3;
- and
- forming a top electrode on a side of the Schottky contact layer opposite the absorber layer.
A photovoltaic device, comprising:
- a glass substrate;
- a back contact selected from the group consisting of fluorinated tin oxide (SnO2:F or FTO), ZnO:Al, ZnO:B, In2O3:Sn, In2O3:Zn, TiB2, LaB6, or TiO2:Nb;
- a photovoltaic absorber material layer comprising an n-type Ag2ZnSn(S,Se)4 material on a side of the back contact opposite the substrate;
- wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer
- a Schottky contact layer comprising MoO3 on a side of the absorber layer opposite the back contact;
- a top electrode on a side of the Schottky contact layer opposite the absorber layer;
- and
- a metal contact grid on a side of the top electrode opposite the Schottky contact layer.
Dependencies are inferred from the claim text.