Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process
AssigneeLam Research Corporation
InventorsAndrew Stratton Bravo, Joydeep Guha, Amit Pharkya
Life of this patent
Estimating the term…
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AssigneeLam Research Corporation
InventorsAndrew Stratton Bravo, Joydeep Guha, Amit Pharkya
Estimating the term…
A method for operating a substrate processing chamber includes after performing a process using a fluorine-based gas in the substrate processing chamber: a) during a first predetermined period, supplying a gas mixture to the substrate processing chamber including one or more gases selected from a group consisting of molecular oxygen, molecular nitrogen, nitric oxide and nitrous oxide and supplying RF power to strike plasma in the substrate processing chamber; b) during a second predetermined period after the first predetermined period, supplying molecular hydrogen gas and RF power to the substrate processing chamber; c) repeating a) and b) one or more times; d) purging the substrate processing chamber with molecular nitrogen gas; e) increasing chamber pressure; f) evacuating the substrate processing chamber; and g) repeating d), e) and f) one or more times.
A method for operating a substrate processing chamber, comprising:
Dependencies are inferred from the claim text.