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US 9,598,769 B2Granted
Method and system for continuous atomic layer deposition
AssigneeUchicago Argonne, LLC
InventorsJeffrey W. Elam, Angel Yanguas-Gil, Joseph A. Libera
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Abstract
A system and method for continuous atomic layer deposition. The system and method includes a housing, a moving bed which passes through the housing, a plurality of precursor gases and associated input ports and the amount of precursor gases, position of the input ports, and relative velocity of the moving bed and carrier gases enabling exhaustion of the precursor gases at available reaction sites.
Claims14
A method for atomic layer deposition, comprising the steps of,
- providing a housing;
- providing a moving bed which passes through the housing of the moving bed including a reaction surface;
- providing a first precursor gas at a first precursor gas input;
- simultaneously providing a second precursor gas at a second precursor gas input spaced apart from the first precursor gas input a distance L;
- and
- controlling the speed of the moving bed and amounts of the first precursor gas released into the housing, the amounts of the first precursor gas being less than available reaction sites of the reaction surface, thereby leading to consumption of the first precursor gases prior to the first precursor gas reaching the second precursor gas input such that the first precursor gas and the second precursor gas are not intermixed.
3 more elements
Dependencies are inferred from the claim text.