Method for cleaning plasma processing chamber and substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Ping Hong, Yu-Cheng Liu
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Abstract
A method for cleaning a plasma processing chamber is provided. The method includes introducing an organic gas into a plasma processing chamber. The organic gas includes an organic compound including carbon and hydrogen. The method includes generating an organic plasma by exciting the organic gas. The organic plasma reacts with metal compound residues over an interior surface of the plasma processing chamber to volatilize the metal compound residues into a gaseous metal compound. The method includes removing the gaseous metal compound from the plasma processing chamber.
Claims20
A method for cleaning a plasma processing chamber, comprising:
- introducing an organic gas into a plasma processing chamber, wherein the organic gas comprises an organic compound comprising carbon and hydrogen;
- generating an organic plasma by exciting the organic gas, wherein the organic plasma reacts with metal compound residues over an interior surface of the plasma processing chamber to volatilize the metal compound residues into a gaseous metal compound;
- and
- removing the gaseous metal compound from the plasma processing chamber.
A method for cleaning a plasma processing chamber, comprising:
- introducing an organic gas into a plasma processing chamber;
- generating an organic plasma by exciting the organic gas, wherein the organic plasma reacts with metal compound residues over an interior surface of the plasma processing chamber to volatilize the metal compound residues into a gaseous metal compound;
- removing the gaseous metal compound from the plasma processing chamber;
- introducing an oxygen atom-containing gas into the plasma processing chamber;
- generating an oxygen atom-containing plasma by exciting the oxygen atom-containing gas, wherein the oxygen atom-containing plasma reacts with organic compound residues over the interior surface to volatilize the organic compound residues into a gaseous carbon compound;
- and
- removing the gaseous carbon compound from the plasma processing chamber.
Dependencies are inferred from the claim text.