Ultrafast quench based nonvolatile bistable device
AssigneeInstitut “Jozef Stefan”
InventorsLjupka Stojcevska, Tomaz Mertelj, Igor Vaskivskyi, Dragan Mihailovic
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AssigneeInstitut “Jozef Stefan”
InventorsLjupka Stojcevska, Tomaz Mertelj, Igor Vaskivskyi, Dragan Mihailovic
Estimating the term…
The invention refers to an ultrafast quench based nonvolatile bistable device which consists of an active material on a passive or active substrate which changes its physical properties, after exposure to a sufficiently temporally short external perturbation causing an ultrafast quench. The perturbation can be from an external ultrashort laser pulse or ultrafast electrical pulse from an electrooptic device or any other generator of ultrashort pulses. This change of the materials properties can be detected as a change of optical properties or electrical resistance. The dielectric properties can be reverted back to their original state by the application of a heat pulse applied by an electrical heater within the device or an external laser.
An ultrafast quench based nonvolatile bistable device which shows a change of reflectivity, transmittance or electrical resistance of a solid state material as a result of the transition from state A to state B, where state A is in a stable thermodynamic state of the material and state B, where state B is a mesoscopically textured state, wherein State B is a stable thermodynamic state of the material formable solely through an temporally short external perturbation resulting in a rapid quench through a phase transition, wherein the temporally short external perturbation is caused by an ultrashort laser pulse or an ultrafast electrical disturbance, and wherein the material used is a polytype of TaS2 or transition metal dichalcogenides, trichalcogenides.
An ultrafast quench based nonvolatile bistable device which shows a change of reflectivity, transmittance or electrical resistance of a solid state material as a result of the transition from state A to state B, where state A is in a stable thermodynamic state of the material and state B, where state B is a mesoscopically textured state, wherein State B is formable solely through an temporally short external perturbation resulting in a rapid quench through a phase transition, wherein the material used is a pure metal containing small amounts of impurity such as C, or other elements to stabilize state B.
Dependencies are inferred from the claim text.