Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy

An apparatus, comprising:

• a memory controller configured to write data to a three-terminal spin-orbit-torque magnetoresistive memory having a magnetic tunnel junction (MTJ) including a free layer located between an oxide barrier layer and a substantially planar spin hall-effect material, including:
• means for applying a first voltage across the MTJ to reduce a magnetic anisotropy of the free layer by inducing an electric field across the oxide barrier layer;
• and
• means for applying a second voltage across the substantially planar spin hall-effect material while the first voltage is applied across the MTJ to cause a current to flow through the substantially planar spin hall-effect material and thereby apply a spin-orbit torque to the free layer, thus causing the free layer to switch between a parallel state and an antiparallel state through spin accumulation on a surface of the substantially planar spin hall-effect material.

An apparatus, comprising:

• a memory controller configured to write data to a three-terminal spin-orbit-torque magnetoresistive memory having a magnetic tunnel junction (MTJ) including a free layer located between an oxide barrier layer and a substantially planar spin hall-effect material,
• wherein the memory controller is configured to apply a first voltage across the MTJ to reduce a magnetic anisotropy of the free layer by inducing an electric field across the oxide barrier layer;
• and
• wherein the memory controller is configured to apply a second voltage across the substantially planar spin hall-effect material while the first voltage is applied across the MTJ to cause a current to flow through the substantially planar spin hall-effect material and thereby apply a spin-orbit torque to the free layer, thus causing the free layer to switch between a parallel state and an antiparallel state through spin accumulation on a surface of the substantially planar spin hall-effect material.

A non-transitory computer-readable medium, comprising:

• fabrication device-executable instructions stored thereon configured to cause a fabrication device to fabricate at least a part of an integrated circuit including a memory controller configured to write data to a three-terminal spin-orbit-torque magnetoresistive memory having a magnetic tunnel junction (MTJ) including a free layer located between an oxide barrier layer and a substantially planar spin hall-effect material,
• wherein the memory controller is configured to apply a first voltage across the MTJ to reduce a magnetic anisotropy of the free layer by inducing an electric field across the oxide barrier layer;
• and
• wherein the memory controller is configured to apply a second voltage across the substantially planar spin hall-effect material while the first voltage is applied across the MTJ to cause a current to flow through the substantially planar spin hall-effect material and thereby apply a spin-orbit torque to the free layer, thus causing the free layer to switch between a parallel state and an antiparallel state through spin accumulation on a surface of the substantially planar spin hall-effect material.