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US 9,584,088 B2Granted
Method for manufacturing acoustic wave device
AssigneeMurata Manufacturing Co., Ltd.
InventorsTaku Kikuchi, Hideaki Takahashi
Life of this patent
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Abstract
A method for manufacturing an acoustic wave device with an excellent frequency-temperature profile is performed such that the acoustic wave device produced includes a piezoelectric substrate, an IDT electrode located on the piezoelectric substrate, and a dielectric film mainly including Si and O and arranged on the piezoelectric substrate to cover the IDT electrode. The dielectric film is formed by sputtering in a sputtering gas containing H2O.
Claims19
A method for manufacturing a surface acoustic wave device comprising:
- forming the surface acoustic wave device to include a piezoelectric substrate that has a negative temperature coefficient of frequency, an IDT electrode located on the piezoelectric substrate, and a dielectric film that has a positive temperature coefficient of frequency, mainly includes Si and O, and is arranged on the piezoelectric substrate to cover the IDT electrode;
- and
- forming the dielectric film by sputtering in a sputtering gas containing H2O and having an H2O partial pressure in a range of about 1% to about 6%, inclusive.
Dependencies are inferred from the claim text.