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US 9,583,671 B2Granted
Quantum efficiency of multiple quantum wells
AssigneeInvensas Corporation
InventorsLiang Wang, Ilyas Mohammed, Masud Beroz
Life of this patent
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Abstract
Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.
Claims14
A method comprising:
- forming a stack of layers for a multiple quantum well semiconductor device on a substrate, said stack of layers comprising:
- a p type layer;
- an electron blocking layer in contact with said p type layer;
- a plurality of quantum well periods in contact with said electron blocking layer, each of said quantum well periods comprising a quantum well layer and a barrier layer that comprises a barrier layer p type doping concentration, and wherein said plurality of quantum well periods comprise barrier layers of varying p type doping concentration;
- an n-type layer in contact with said plurality of quantum well periods;
- and
- etching said stack of layers such that said plurality of quantum well periods comprise said quantum well layers of varying area.
4 more elements
Dependencies are inferred from the claim text.