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US 9,583,358 B2Granted
Hardmask composition and method of forming pattern by using the hardmask composition
AssigneeSamsung Electronics Co., Ltd.
InventorsSangwon Kim, Hyeonjin Shin, Seongjun Park
Life of this patent
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Abstract
A hardmask composition may include a solvent and a 2-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen or a 2-dimensional carbon nanostructure precursor thereof. A content of oxygen in the 2-dimensional carbon nanostructure precursor may be lower than about 0.01 atom % or greater than about 40 atom %. The hardmask composition may be used to form a fine pattern.
Claims8
A hardmask composition comprising:
- a 2-dimensional carbon nanostructure precursor,
- a content of the oxygen in the 2-dimensional carbon nanostructure precursor being lower than about 0.01 atom % and greater than or equal to about 0 atom %, or
- a content of the oxygen in the 2-dimensional carbon nanostructure precursor is greater than about 40 atom % and less than or equal to about 80 atom %;
- and
- a solvent, wherein
- the 2-dimensional carbon nanostructure precursor is one of expanded graphite obtained from exfoliated graphite and an oxidation product of acid-treated graphite.
3 more elements
Dependencies are inferred from the claim text.