Composition for film formation, resist underlayer film and forming method thereof, pattern-forming method and compound

A pattern-forming method comprising:

• applying a composition on an upper face side of a substrate to form a resist underlayer film;
• baking the resist underlayer film;
• forming a resist pattern on an upper face side of the resist underlayer film;
• and
• sequentially etching the resist underlayer film and a substrate using the resist pattern as a mask,
• wherein the composition comprises:
• a compound represented by formula (1);
• and
• a solvent,
• wherein in the formula (1),
• R1, R2 and R3 each independently represent a group represented by formula (a), wherein R1, R2 and R3 are identical or different;
• Ra, Rb, Rc and Rd each independently represent a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not comprising an aromatic ring;
• x, y and z are each independently an integer of 0 to 4;
• and
• w is an integer of 0 to 3,
• wherein in a case where Ra to Rd are each present in a plurality of number, a plurality of Ras are identical or different, a plurality of Rbs are identical or different, a plurality of Rcs are identical or different, and a plurality of Rds are identical or different,
• RA—C≡C—RB— (a)
• wherein in the formula (a),
• RA represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group;
• and
• RB represents a single bond or an arylene group,
• wherein a part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group are unsubstituted or substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not comprising an aromatic ring.