Method of patterning a material layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShu-Hao Chang, Kuo-Chang Kau, Kevin Huang, Jeng-Horng Chen
Life of this patent
Estimating the term…
Abstract
A method of fabricating a semiconductor device is disclosed. The method includes forming a radiation-removable-material (RRM) layer over a substrate and removing a first portion of the RRM layer in a first region of the substrate by exposing the first portion of the RRM layer to a radiation beam. A second portion of the RRM layer in a second region of the substrate remains after the removing of the first portion of the RRM layer in the first region. The method also includes forming a selective-forming-layer (SFL) over the second portion of the RRM layer in the second region of the substrate and forming a material layer over the first region of the substrate.
Claims20
A method comprising:
- forming a radiation-removable-material (RRM) layer over a substrate;
- removing a first portion of the RRM layer in a first region of the substrate by exposing the first portion of the RRM layer to a radiation beam, wherein a second portion of the RRM layer in a second region of the substrate remains after the removing of the first portion of the RRM layer in the first region;
- forming a selective-forming-layer (SFL) over the second portion of the RRM layer in the second region of the substrate;
- and
- forming a material layer over the first region of the substrate.
A method comprising:
- forming a radiation-removable-material (RRM) layer over a substrate;
- exposing the RRM layer by an extreme ultraviolet (EUV) beam through a photomask to remove a first portion of the RRM layer in a first region of substrate, wherein a second portion of the RRM layer in a second region of the substrate remains after the removing of the first portion of the RRM layer in the first region;
- forming self-assembled monolayers (SAMs) over the second portion of RRM layer in the second region;
- and
- forming a material layer over the first region of the substrate.
A method comprising:
- performing a hexamethyldisilizane (HMDS) treatment to an dielectric substrate to modify a surface of the dielectric substrate;
- exposing the dielectric substrate to an extreme ultraviolet (EUV) beam through a photomask in a hydrogen environment to remove a first portion of the modified surface in a first region of the dielectric substrate, wherein a second portion of the modified surface in a second region of the dielectric substrate remains after the removing of the first portion of the modified surface in the first region;
- forming a self-assembled monolayers (SAMs) over the second portion of the modified surface in the second region;
- and
- forming a metal oxide layer over the first region of the dielectric substrate.
Dependencies are inferred from the claim text.