Back to results
US 9,570,274 B2Granted
Plasma activated conformal dielectric film deposition
AssigneeNovellus Systems, Inc.
InventorsShankar Swaminathan, Jon Henri, Dennis Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi Kattige, Bart van Schravendijk, Andrew J. McKerrow
Life of this patent
Estimating the term…
Abstract
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
Claims11
A method of depositing a film on a non-planar substrate surface in a reaction chamber, the method comprising:
- introducing a first reactant into the reaction chamber under non-plasma conditions allowing the first reactant to adsorb onto the non-planar substrate surface;
- introducing a dopant containing material into the reaction chamber under non-plasma conditions;
- and
- subsequently exposing the non-planar substrate surface to plasma to form a doped film conformal to the non-planar substrate surface.
1 more element
Dependencies are inferred from the claim text.