Method of fabricating an integrated circuit device

A method of fabricating an integrated circuit device, the method comprising:

• forming a first gate structure in a first region of a substrate;
• forming a second gate structure in a second region of the substrate;
• forming a protective layer over the first gate structure;
• forming features over the substrate adjacent to the second gate structure;
• and
• forming spacers adjacent to the first gate structure and contacting the second gate structure, wherein the features separate an entirety of the spacers contacting the second gate structure from the substrate, and the spacers adjacent to the first gate structure contact the substrate.

A method of fabricating an integrated circuit device, the method comprising:

• forming a p-type gate structure in a first region of a substrate;
• forming an n-type gate structure in a second region of the substrate, wherein the substrate comprises an isolation feature between the first region and the second region;
• forming a first protective layer over the p-type gate structure;
• forming source/drain regions in the substrate adjacent to the n-type gate structure;
• and
• removing the first protective layer from the p-type gate structure, wherein removing the first protective layer comprises:
• passivating the isolation feature and the n-type gate structure;
• stripping the first protective layer from the p-type gate structure;
• and
• cleaning the passivated isolation feature, the passivated n-type gate structure and the stripped p-type gate structure.