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US 9,559,712 B2Granted
Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZhiyuan Cheng, Calvin Sheen
Life of this patent
Estimating the term…
Abstract
Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
Claims17
A device comprising:
- an analog-to-digital converter comprising:
- a first voltage divider, an input node of the first voltage divider being electrically coupled to a circuit analog input node,
- a first multi-state resonant tunneling bipolar transistor having a first base, a first collector, and a first emitter, a voltage-divided node of the first voltage divider being electrically coupled to the first base, the first collector being a first output and being electrically coupled to a first node of a first impedance element, a second node of the first impedance element being electrically coupled to a first power node, the first emitter being electrically coupled to a second power node,
- a second voltage divider, an input node of the second voltage divider being electrically coupled to the circuit analog input node, and
- a second multi-state resonant tunneling bipolar transistor having a second base, a second collector, and a second emitter, a voltage-divided node of the second voltage divider being electrically coupled to the second base, the second collector being a second output and being electrically coupled to a first node of a second impedance element, a second node of the second impedance element being electrically coupled to the first power node, the second emitter being electrically coupled to the second power node;
- wherein:
- the first multi-state resonant tunneling bipolar transistor is on a first crystalline material, the first crystalline material being on a substrate crystalline material of a substrate, the first crystalline material being lattice-mismatched to the substrate crystalline material, a majority of defects in the first crystalline material arising from the first crystalline material being lattice-mismatched to the substrate crystalline material terminating at sidewalls of the first crystalline material, and
- the second multi-state resonant tunneling bipolar transistor is on a second crystalline material, the second crystalline material being on the substrate crystalline material, the second crystalline material being lattice-mismatched to the substrate crystalline material, a majority of defects in the second crystalline material arising from the second crystalline material being the lattice-mismatched to the substrate crystalline material terminating at sidewalls of the second crystalline material.
5 more elements
A device comprising:
- a comparator comprising:
- a first resonant tunneling diode (RTD) having a first anode and a first cathode, the first anode being electrically coupled to a first power node, the first cathode being electrically coupled to an output node,
- a first high electron mobility transistor (HEMT) having a first gate, a first source/drain, and a second source/drain, the first gate being electrically coupled to an input node, the first source/drain being electrically coupled to the output node,
- a second RTD having a second anode and a second cathode, the second anode being electrically coupled to the second source/drain, the second cathode being electrically coupled to a second power node, and
- a second HEMT having a second gate, a third source/drain, and a fourth source/drain, the second gate being electrically coupled to a clock node, the third source/drain being electrically coupled to the first power node, the fourth source/drain being electrically coupled to the output node;
- wherein:
- the first RTD is on a first crystalline material, the first crystalline material being on a substrate crystalline material of a substrate, the first crystalline material being lattice-mismatched to the substrate crystalline material, a majority of defects in the first crystalline material arising from the first crystalline material being lattice-mismatched to the substrate crystalline material terminating at sidewalls of the first crystalline material, and
- the second RTD is on a second crystalline material, the second crystalline material being on the substrate crystalline material, the second crystalline material being lattice-mismatched to the substrate crystalline material, a majority of defects in the second crystalline material arising from the second crystalline material being lattice-mismatched to the substrate crystalline material terminating at sidewalls of the second crystalline material.
5 more elements
A device comprising:
- a clock-generator comprising:
- a first resonant tunneling diode (RTD) having a first anode and a first cathode, the first anode being electrically coupled to an output node, the first cathode being electrically coupled to a first power node,
- a second RTD having a second anode and a second cathode, the second anode being electrically coupled to the output node, the second cathode being electrically coupled to a second power node,
- a third RTD having a third anode and a third cathode, the third anode being electrically coupled to the first power node, the third cathode being electrically coupled to a complementary output node, and
- a fourth RTD having a fourth anode and a fourth cathode, the fourth anode being electrically coupled to the second power node, the fourth cathode being electrically coupled to the complementary output node;
- wherein each of the first RTD, the second RTD, the third RTD, and the fourth RTD is on a respective first crystalline material, the first crystalline material being on a substrate crystalline material of a substrate, the first crystalline material being lattice-mismatched to the substrate crystalline material, a majority of defects in the first crystalline material arising from the lattice-mismatch to the substrate crystalline material terminating at sidewalls of the first crystalline material.
3 more elements
Dependencies are inferred from the claim text.