System and method for gas-phase sulfur passivation of a semiconductor surface
AssigneeASM IP Holding B.V.
InventorsFu Tang, Michael Eugene Givens, Qi Xie, Petri Raisanen
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Abstract
Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.
Claims14
A method of passivating a surface of a semiconductor, the method comprising the steps of:
- providing the surface of the semiconductor to a reaction chamber of a reactor;
- exposing the surface of the semiconductor to a gas-phase sulfur precursor selected from the group consisting of H2S, NH4HS, and organosulfur compounds in the reaction chamber;
- and
- passivating the surface of the semiconductor in the reaction chamber using the gas-phase sulfur precursor to form a passivated semiconductor surface,
- wherein a pressure within the reaction chamber during the step of passivating is between 0.5 Torr and 750 Torr.
A method of passivating a surface of a semiconductor, the method comprising the steps of:
- providing the surface of the semiconductor to a reaction chamber of a reactor;
- exposing the surface of the semiconductor to a gas-phase sulfur precursor selected from the group consisting of NH4HS, H2S, and organosulfur compounds in the reaction chamber;
- and
- passivating the surface of the semiconductor in the reaction chamber using the gas-phase sulfur precursor to form a passivated semiconductor surface.
A method of passivating a surface of a semiconductor, the method comprising the steps of:
- providing the surface of the semiconductor to a reaction chamber of a reactor;
- cleaning the surface of the semiconductor using an in-situ hydrogen gas-phase process,
- after the step of cleaning, exposing the surface of the semiconductor to a gas-phase sulfur precursor selected from the group consisting of NH4HS, H2S, and organosulfur compounds in the reaction chamber;
- and
- passivating the surface of the semiconductor in the reaction chamber using the gas-phase sulfur precursor to form a passivated semiconductor surface.
Dependencies are inferred from the claim text.