Apparatuses, systems, and methods for ion traps
AssigneeHoneywell International Inc.
InventorDaniel Youngner
Life of this patent
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Abstract
Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.
Claims17
An ion trap apparatus, comprising:
- a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces;
- two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails;
- a number of through-silicon vias (TSVs) formed through a substrate of the ion trap;
- and
- a trench capacitor formed in the substrate around at least one TSV.
An ion trap system, comprising:
- a substrate material;
- three sequential planar conductive materials formed above the substrate material, wherein:
- a first planar conductive material forms a ground plane;
- a second planar conductive material forms a signal routing plane;
- and
- a third planar conductive material forms a ground connection plane;
- a number of longitudinal gaps formed in the second planar conductive material to separate two longitudinal sequences of direct current (DC) electrodes from at least two separate longitudinal radio frequency (RF) rails positioned between the two sequences of DC electrodes;
- a first number of through-silicon vias (TSVs) formed through the substrate material;
- a first number of trench capacitors formed in the substrate material around at least one of the first number of TSVs;
- and
- at least two longitudinal microwave (MW) rails are positioned in the substrate below the first planar conductive material.
Dependencies are inferred from the claim text.