Back to results
US 9,556,531 B2Granted
Method for ultra-fast boriding
AssigneeUchicago Argonne, LLC
InventorsAli Erdemir, Vivekanand Sista, Ozgenur Kahvecioglu, Osman Levent Eryilmaz
Life of this patent
Estimating the term…
Abstract
An article of manufacture and method of forming a borided material. An electrochemical cell is used to process a substrate to deposit a plurality of borided layers on the substrate. The plurality of layers are co-deposited such that a refractory metal boride layer is disposed on a substrate and a rare earth metal boride conforming layer is disposed on the refractory metal boride layer.
Claims4
A method of forming a boride material on a substrate, comprising the steps of,
- providing a boriding component;
- providing a substrate having a metal alloy having a first metal constituent comprising tungsten (W) and a second metal constituent comprising rhenium (Re);
- disposing the substrate and the boriding component in an electrochemical bath;
- establishing the electrochemical bath at a temperature of about 900°-1050° C.;
- and
- forming a first metal constituent conforming boride layer comprising WB4 on the substrate and a second metal constituent conforming boride layer comprising ReB2 on the first metal constituent conforming boride layer.
3 more elements
A method of forming a boride material on a substrate, comprising the steps of,
- providing a boriding component;
- providing a substrate having a metal alloy having a first metal constituent comprising tungsten (W) and a second metal constituent comprising rhenium (Re), the metal alloy consisting essentially of W—Re 25% alloy;
- disposing the substrate and the boriding component in an electrochemical bath;
- establishing the electrochemical bath at a temperature of about 900°-1050° C.;
- and
- forming a first metal constituent conforming boride layer on the substrate and a second metal constituent conforming boride layer on the first metal constituent conforming boride layer.
3 more elements
Dependencies are inferred from the claim text.