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US 9,553,209 B2Granted
Process for manufacturing a semiconductor device comprising an empty trench structure and semiconductor device manufactured thereby
AssigneeSTMicroelectronics S.r.l.
InventorAntonino Fiumara
Life of this patent
Estimating the term…
Abstract
The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above the body for closing the open end or mouth of the trench. The trench is formed by selectively etching the body, wherein the reaction by-products deposit on the walls of the trench and form a passivation layer along the walls of the trench and a restriction element in proximity of the mouth of the trench.
Claims20
A process for manufacturing a microelectronic semiconductor device, the process comprising:
- selectively etching a body to form a trench having side walls and an open end, the selectively etching forming reaction by-products;
- causing the reaction by-products to deposit on the side walls of the trench to form a restriction element in proximity of the open end of the trench;
- and
- forming a metal layer above the body, the metal layer closing the open end of the trench without penetrating into the trench.
1 more element
A vacuum microelectronic device comprising:
- a semiconductor body;
- a trench etched in the semiconductor body, the trench having side walls and an open end;
- a restriction element at an open end of the trench, the restriction element formed by reaction by-products, at least some of the reaction by-products being formed on the side walls of the trench;
- and
- a metal layer above the semiconductor body, the metal layer closing the open end of the trench without penetrating into the trench.
2 more elements
A process comprising:
- forming a mask layer over a stack of layers, the mask layer including at least one through opening having side walls;
- etching the stack of layers through the at least one through opening of the mask layer to form a trench, the trench having side walls and an open end, wherein etching causes reaction by-products to be deposited on the side walls of the trench and the side walls of the mask layer to form a restriction element;
- and
- forming a metal layer covering mask layer and the stack of layers, the metal layer closing the open end of the trench without penetrating into the trench.
1 more element
Dependencies are inferred from the claim text.