Forming a memory device using sputtering to deposit silver-selenide film
AssigneeMicron Technology, Inc.
InventorsJiutao Li, Keith Hampton, Allen McTeer
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Abstract
A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.
Claims9
A method of forming a memory device comprising:
- setting an initial base pressure of a process gas in a vacuum chamber;
- maintaining a pressure of the process gas at a value including or between 0.3 mTorr and 10 mTorr;
- applying a power level based at least in part on the maintained pressure to a single sputter target comprising a first concentration of silver equal to 66.7 atomic weight percent and a second concentration of selenide;
- and
- forming a film over a substrate based at least in part on the application of the power level and the maintenance of the pressure,
- wherein the film comprises a third concentration of silver between 66.7 atomic weight percent and 67.5 atomic weight percent and a fourth concentration of selenide.
A method of forming a memory device, comprising:
- sputtering a single sputter target to form a film over a substrate,
- wherein the sputtering is performed at between 0.3 mTorr to 10 mTorr,
- wherein the sputter target comprises a first concentration of silver equal to 66.7 atomic weight percent and a second concentration of selenide, and
- wherein the film comprises a third concentration of silver between 66.7 atomic weight percent and 67.5 atomic weight percent and a fourth concentration of selenide.
A method of forming a silver-selenide film comprising:
- setting an initial base pressure of a process gas in a vacuum chamber;
- maintaining a pressure of the process gas at a value including or between 0.3 mTorr and 10 mTorr;
- applying a power level to a single sputter target having a formula of AgySe, wherein the power level is based at least in part on the initial base pressure of the process gas;
- and
- forming a film having a formula of AgxSe over a substrate based at least in part on the application of the power level and the maintenance of the pressure, wherein the film has a concentration of silver equal to 66.7 atomic weight percent, and
- wherein a value of x is different from a value of y.
A method of forming a film, comprising:
- setting an initial base pressure between 0.3 mTorr to 10 mTorr;
- sputtering a single sputter target having a formula of AgySe to form a film having a formula of AgxSe over a substrate,
- wherein a value of x is different from a value of y, and
- wherein the film has a concentration of silver between 66.7 atomic weight percentage and 67.5 atomic weight percentage.
Dependencies are inferred from the claim text.