Radio-frequency switches having frequency-tuned body bias
AssigneeSkyworks Solutions, Inc.
InventorsHaki Cebi, Fikret Altunkilic
Life of this patent
Estimating the term…
Abstract
Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each FET having a respective gate and body. A resonance circuit connects the body of each of the at least one FET to a reference node. The resonance circuit may be configured to behave as an approximately closed circuit at low frequencies below a selected value and an approximately open circuit at an operating frequency, wherein the approximately closed circuit allows removal of surface charge from the body to the reference node.
Claims17
A radio-frequency (RF) switch comprising:
- at least one field-effect transistor (FET) disposed between a first node and a second node, each of the at least one FET having a respective gate and body;
- and
- a resonance circuit that connects the body of each of the at least one FET to a reference node, the resonance circuit including an LC circuit having an inductance electrically parallel with a capacitance, the resonance circuit further including a body switch coupled to the LC circuit in series, the body switch coupled to a gate bias voltage via a resistance, the body switch disposed between the resonance circuit and the reference node, the resonance circuit configured to behave as an approximately closed circuit at low frequencies below a selected value and an approximately open circuit at an operating frequency, configured to provide a DC short for the body of the FET, and configured to provide a desired resonance frequency, the approximately closed circuit allowing removal of surface charge from the body to the reference node.
A method for operating a radio-frequency (RF) switch, the method comprising:
- controlling at least one field-effect transistor (FET) disposed between first and second nodes so that each of the at least one FET is in an ON state or an OFF state;
- and
- selectively removing surface charge from a respective body of each of the at least one FET at low frequencies below a selected value, the selective removal facilitated by a resonance circuit that behaves as an approximately closed circuit at the low frequencies, the resonance circuit configured to provide a DC short for the body of the FET and configured to provide a desired resonance frequency, the resonance circuit including an LC circuit having an inductance electrically parallel with a capacitance and further including a body switch coupled to the LC circuit in series, the body switch coupled to a gate bias voltage via a resistance, and the body switch disposed between the resonance circuit and the reference node.
A radio-frequency (RF) switch module comprising:
- a packaging substrate configured to receive a plurality of components;
- a semiconductor die mounted on the packaging substrate, the die including at least one field-effect transistor (FET);
- and
- a resonance circuit that connects a respective body of each of the at least one FET to a reference node, the resonance circuit including an LC circuit having an inductance electrically parallel with a capacitance, the resonance circuit further including a body switch coupled to the LC circuit in series, the body switch coupled to a gate bias voltage via a resistance, the body switch disposed between the resonance circuit and the reference node, and the resonance circuit configured to behave as an approximately closed circuit at low frequencies below a selected value and as an approximately open circuit at an operating frequency, configured to provide a DC short for the body of the FET, and configured to provide a desired resonance frequency, the approximately closed circuit allowing removal of surface charge from the respective body to the reference node.
Dependencies are inferred from the claim text.