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US 9,543,738 B2Granted
Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
AssigneeSoraa Laser Diode, Inc.
InventorsJames W. Raring, Mathew Schmidt, Christiane Poblenz
Life of this patent
Estimating the term…
Abstract
A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
Claims55
A laser diode device comprising:
- a gallium and nitrogen containing material including a {20-21} crystalline surface region;
- an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being free from AlGaN;
- an active region comprising at least three quantum wells and a plurality of GaN barrier layers, each of the quantum wells having a thickness of 1 nm or greater and less than 4 nm, and each of the plurality of GaN barrier layers being free from Al and having a thickness of between 1.5 nm to 2.5 nm, each adjacent pair of the quantum wells separated by one of the plurality of GaN barrier layers;
- a p-type cladding material overlying the active region, the p-type cladding material being free from AlGaN;
- a p++ contact region overlying the p-type cladding material;
- a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end;
- a first facet formed on the first end;
- and
- a second facet formed on the second end;
- wherein the active region is configured to operate at a forward voltage of less than 7 volts.
7 more elements
A laser diode device comprising:
- a gallium and nitrogen containing material including a {20-21}crystalline surface region;
- an n-type cladding material overlying the gallium and nitrogen containing material;
- an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm or greater, and each of the plurality of barrier layers having an n-type impurity characteristic and a thickness of 1 nm or greater and less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers;
- a p-type cladding material overlying the active region, the p-type cladding material being free from AlGaN;
- a p-type material overlying the p-type cladding material;
- a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising of a first end and a second end;
- a first facet formed on the first end;
- and
- a second facet formed on the second end,
- wherein the active region is configured to operate at a forward voltage of less than 7 volts.
7 more elements
A laser diode device comprising:
- an n-type gallium and nitrogen containing material including a {20-21} crystalline surface region;
- an n-type cladding material overlying the n-type gallium and nitrogen containing material, the n-type cladding material being substantially free from aluminum bearing material;
- an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm or greater, and each of the plurality of barrier layers having a thickness of 1 nm or greater and less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers;
- a p-type cladding material overlying the active region, the p-type cladding material being free from AlGaN;
- a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end;
- a first facet formed on the first end;
- and
- a second facet formed on the second end;
- wherein the active region is configured to operate at a forward voltage of less than 7 volts.
6 more elements
Dependencies are inferred from the claim text.