Method of making a multicomponent film
AssigneeAir Products and Chemicals, Inc.
InventorsXinjian Lei, Moo-Sung Kim
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Abstract
Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used trichlorogermane.
Claims4
A method for depositing a germanium-containing film onto at least a portion of a substrate, the method comprising steps of:
- a. providing the substrate into a reactor;
- and
- b. introducing into the reactor a germanium precursor comprising HGeCI3 under deposition conditions sufficient for the germanium precursor to react with the substrate and provide the germanium-containing film.
Dependencies are inferred from the claim text.