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US 9,543,516 B2Granted
Method for forming a doped metal oxide for use in resistive switching memory elements
AssigneesIntermolecular, Inc., SanDisk 3D LLC, Kabushiki Kaisha Toshiba
InventorsJinhong Tong, Randall Higuchi, Imran Hashim, Vidyut Gopal
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Abstract
Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.
Claims20
A method for forming resistive switching element, the method comprising:
- depositing a first metal precursor onto a surface of a substrate provided in a processing chamber;
- purging an excess of the first metal precursor not deposited on the surface of the substrate from the processing chamber;
- depositing a first dopant precursor onto the surface of the substrate,
- the surface comprising the first metal precursor while depositing the first dopant precursor;
- purging an excess of the first dopant precursor not deposited on the surface of the substrate from the processing chamber;
- and
- oxidizing the first metal precursor and the first dopant precursor deposited on the surface of the substrate with a first reagent,
- wherein oxidizing the first metal precursor and the first dopant precursor forms a first doped metal oxide,
- wherein the first doped metal oxide is operable as a first part of a resistive switching element of a resistive random access memory (ReRAM) cell.
6 more elements
Dependencies are inferred from the claim text.