Electrode materials and interface layers to minimize chalcogenide interface resistance
AssigneeIntel Corporation
InventorsF. Daniel Gealy, Andrea Gotti, Davide Colombo, Kuo-Wei Chang
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Abstract
A phase-change memory cell having a reduced electrode-chalcogenide interface resistance and a method for making the phase-change memory cell are disclosed: An interface layer is formed between an electrode layer and a chalcogenide layer that and provides a reduced resistance between the chalcogenide-based phase-change memory layer and the electrode layer. Exemplary embodiments provide that the interface layer comprises a tungsten carbide, a molybdenum carbide, a tungsten boride, or a molybdenum boride, or a combination thereof. In one exemplary embodiment, the interface layer comprises a thickness of between about 1 nm and about 10 nm.
Claims7
A phase-change memory cell, comprising:
- a chalcogenide-based phase-change memory layer;
- a first electrode layer;
- a first interface layer between the chalcogenide-based phase-change memory layer and the first electrode layer and in contact with each of the chalcogenide-based phase-change memory layer and the first electrode layer, the first interface layer comprising a boride to provide a reduced resistance between the chalcogenide-based phase-change memory layer and the first electrode layer;
- a second interface layer between the chalcogenide-based phase-change memory layer and the second electrode layer and in contact with each of the chalcogenide-based phase-change memory layer and the second electrode layer, the second interface layer comprising a boride to provide a reduced resistance between the chalcogenide-based phase-change memory layer and the second electrode layer;
- a switching device layer comprising an ovonic threshold switch;
- a third electrode layer;
- a third interface layer between the switching device layer and the second electrode layer and in contact with each of the switching device layer and the second electrode layer;
- and
- a fourth interface layer between the switching device and the third electrode layer and in contact with each of the switching device layer and the third electrode layer.
Dependencies are inferred from the claim text.